IRF614 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF614

IRF614 January 1998 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, a

Power MOSFET IRF614, SiHF614 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 8.2 1.8 4.5 Single 2.0 TO-220AB D S D G G S N-Channel M

  
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IRF614B/IRFS614B November 2001 IRF614B/IRFS614B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar,

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