IRF5806 डाटा शीट PDF( Datasheet )

PD - 93997 IRF5806 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel VDSS -20V RDS(on) max 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V ID -4.0A -3

PD - 95476B IRF5806PbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free HEXFET® Power MOSFET VDSS -20V RDS(on) max 86m�