डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF540Z | AUTOMOTIVE MOSFET PD - 94758
AUTOMOTIVE MOSFET
IRF540Z IRF540ZS IRF540ZL
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Re |
International Rectifier |
|
IRF540Z | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF540Z,IIRF540Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.0265Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
|
IRF540ZL | AUTOMOTIVE MOSFET PD - 94758
AUTOMOTIVE MOSFET
IRF540Z IRF540ZS IRF540ZL
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Re |
International Rectifier |
|
IRF540ZL | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
|
IRF540ZLPBF | Power MOSFET PD - 95531A
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Pow |
International Rectifier |
|
IRF540ZPBF | Power MOSFET PD - 95531A
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Pow |
International Rectifier |
|
IRF540ZS | AUTOMOTIVE MOSFET PD - 94758
AUTOMOTIVE MOSFET
IRF540Z IRF540ZS IRF540ZL
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Re |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |