डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF540NS | Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from Internatio |
International Rectifier |
|
IRF540NS | N-Channel MOSFET SMD Type
N-Channel MOSFET IRF540NS (KRF540NS)
MOSFET
■ Features
● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON) < 44mΩ (VGS = 10V) ● Fast Switching
D
TO-263
9.65 (Min) 10.67 (Max)
90 ~ 93 |
Kexin |
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IRF540NS | N-Channel MOSFET Isc N-Channel MOSFET Transistor
IRF540NS
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for |
INCHANGE |
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IRF540NSPbF | Power MOSFET l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free Description
G
Advanced HEXFET® Power M |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |