डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF520N | Power MOSFET PD - 91339A
IRF520N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V
G S
RDS(on) = 0.20Ω ID |
International Rectifier |
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IRF520N | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRF520N,IIRF520N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.2Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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IRF520NL | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
pe |
INCHANGE |
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IRF520NLPBF | HEXFET Power MOSFET PD- 95749
IRF520NSPbF IRF520NLPbF
Lead-Free
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1
8/23/04
IRF520NS/LPbF
2
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IRF520NS/LPbF
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3
IRF520NS/LPbF
4
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IRF520NS/LPbF
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International Rectifier |
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IRF520NPbF | Power MOSFET Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
G
Description
Fifth Generation HEXFETs from International Rectifier utilize ad |
International Rectifier |
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IRF520NS | Power MOSFET PD -91340A
IRF520NS/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRF520NS) Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rat |
International Rectifier |
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IRF520NS | N-Channel MOSFET Isc N-Channel MOSFET Transistor
IRF520NS
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |