डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF520 | N-Channel Power MOSFET IRF520 IRF520FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF520 IRF520FI
s s s s s s s
V DSS 100 V 100 V
R DS( on) < 0.27 Ω < 0.27 Ω
ID 10 A 7A
TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED |
STMicroelectronics |
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IRF520 | N-Channel Power MOSFET |
Supertex Inc |
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IRF520 | N-Channel Power MOSFET IRF520
Data Sheet November 1999 File Number 1574.4
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed |
Intersil Corporation |
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IRF520 | N-Channel Power MOSFET Data Sheet
January 2002
IRF520
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guar |
Fairchild Semiconductor |
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IRF520 | Power MOSFET www.vishay.com
IRF520
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
16 4.4 7.7 Sing |
Vishay |
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IRF520 | Power MOSFET |
International Rectifier |
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IRF520 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF520
·FEATURES ·Typical RDS(on) =0.27Ω ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature ·Mi |
INCHANGE |
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