डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF510 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF510
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
|
Inchange Semiconductor |
|
IRF510 | N-Channel Power MOSFET Data Sheet
January 2002
IRF510
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guar |
Fairchild Semiconductor |
|
IRF510 | Power MOSFET www.vishay.com
IRF510
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
8.3 2.3 3.8 Sin |
Vishay |
|
IRF510 | Power MOSFET |
International Rectifier |
|
IRF510A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower |
Fairchild Semiconductor |
|
IRF510PBF | HEXFET POWER MOSFET www.DataSheet4U.com
PD - 95364
IRF510PbF
•
Lead-Free
www.irf.com
1
6/10/04
IRF510PbF
2
www.irf.com
IRF510PbF
www.irf.com
3
IRF510PbF
4
www.irf.com
IRF510PbF
www.irf.com
5
IRF510PbF
6
www. |
International Rectifier |
|
IRF510S | Power MOSFET |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |