IRF4905 डाटा शीट PDF( Datasheet )

isc P-Channel MOSFET Transistor IRF4905,IIRF4905 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.02Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel G Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs fro

PD - 97034 IRF4905SPbF IRF4905LPbF Features O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax O Some Parameters

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ(@VGS= -10V; ID= -38A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variatio

PD - 97034 IRF4905SPbF IRF4905LPbF Features O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from Internati

PD - 97034 IRF4905SPbF IRF4905LPbF Features O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax O Some Parameters