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IRF3710 | N-Channel Power MOSFET SEMICONDUCTOR
IRF3710 Series RRooHHSS
DESCRIPTION
Nell High Power Products
N-Channel Power MOSFET (57A, 100Volts)
The Nell IRF3710 are N-channel enhancement mode silicon gate power field effect transistors. |
nELL |
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IRF3710 | N-Channel MOSFET Transistor isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF3710
·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 23mΩ(Ma |
Inchange Semiconductor |
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IRF3710 | Power MOSFET PD - 94954D
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
IRF3710PbF
HEXFET® Power MOSFET
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International Rectifier |
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IRF3710L | Power MOSFET IRF3710SPbF IRF3710LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
HEXFET® Power MOSFET |
International Rectifier |
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IRF3710L | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
pe |
INCHANGE |
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IRF3710LPBF | Power MOSFET IRF3710SPbF IRF3710LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
HEXFET® Power MOSFET |
International Rectifier |
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IRF3710PbF | HEXFET Power MOSFET PD - 94954D
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
IRF3710PbF
HEXFET® Power MOSFET
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International Rectifier |
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