IRF341 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF341 DESCRIPTION ·Silicon Gate for Fast Switching Speed ·Rugged APPLICATIONS ·High voltage ·High speed application ABSO

IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed appli

PD - 91477D IRF3415 HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V G S RDS(on) = 0.042Ω I

isc N-Channel MOSFET Transistor IRF3415，IIRF3415 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤42mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot vari

PD - 91509C IRF3415S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Ra