IRF330 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF330 DESCRIPTION ·Drain Current ID=5.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resista

IRF330 Data Sheet March 1999 File Number 1570.4 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, t

PD - 90335F IRF330 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDS

PD - 95879 AUTOMOTIVE MOSFET Features O IRF3305 HEXFET® Power MOSFET D O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3305， IIRF3305 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested