डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF2804 | HEXFET Power MOSFET PD - 94436C
AUTOMOTIVE MOSFET
IRF2804 IRF2804S IRF2804L
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive |
International Rectifier |
|
IRF2804 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF2804,IIRF2804
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤2.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
|
IRF2804 | HEXFET Power MOSFET IRF2804 IRF2804S/L
Features
l l l l l
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = |
FreesCale Electronics |
|
IRF2804L | HEXFET Power MOSFET PD - 94436C
AUTOMOTIVE MOSFET
IRF2804 IRF2804S IRF2804L
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive |
International Rectifier |
|
IRF2804L | HEXFET Power MOSFET IRF2804 IRF2804S/L
Features
l l l l l
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = |
FreesCale Electronics |
|
IRF2804LPbF | HEXFET Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET uti |
International Rectifier |
|
IRF2804PbF | HEXFET Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET uti |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |