IRF250 डाटा शीट PDF( Datasheet )

IRF250 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO�

IRF250 Data Sheet March 1999 File Number 1825.3 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to wi

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF250 DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resis

POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED IRN50-IRN150 IRF150-IRF500 Features and Applications Non-inductive, flat shaped aluminum housed wire wound fixe

PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS JANTX2N6766 JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS IR

isc N-Channel MOSFET Transistor IRF250P224，IIRF250P224 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust