IRF240 डाटा शीट PDF( Datasheet )

IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 200V 18A 0.18W 22.23

IRF240 Data Sheet March 1999 File Number 1584.3 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFETs designed, t

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF240 DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistan

www.DataSheet4U.com PD - 90370 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A  IRF240 200V, N-CHAN

LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRF240SMD N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0