IRF200B211 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRF200B211，IIRF200B211 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤170mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications �