डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF1018E | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1018E, IIRF1018E
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche teste |
INCHANGE |
|
IRF1018EPbF | Power MOSFET Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and D |
International Rectifier |
|
IRF1018ES | N-Channel MOSFET Isc N-Channel MOSFET Transistor
IRF1018ES
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations fo |
INCHANGE |
|
IRF1018ESLPbF | Power MOSFET Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and D |
International Rectifier |
|
IRF1018ESPbF | Power MOSFET Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and D |
International Rectifier |
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