डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPW60R125C6 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW60R125C6 IIPW60R125C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤125mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-L |
INCHANGE |
|
IPW60R125C6 | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6600V
600VCoolMOS™C6PowerTransistor IPx60R125C6
DataSheet
Rev.2.3 Final
PowerManagement&Multimarket
-''H 6YYV@BEc 6- CY`O[ F[KXS |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |