IPP60R199CP डाटा शीट PDF( Datasheet )

CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target application

isc N-Channel MOSFET Transistor IPP60R199CP，IIPP60R199CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.199Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-t