डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP60R099C6 | MOSFET FGK@?L
FTcP[ GgXST KTXR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a
=^^[FGKm =6
6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J099=6
>PcP KWTTc
Rev. 2.3 @X]P[
H^fTa FP]PVTT]c " Fd[cXPaZTc
-''H 6YYV@BEc 6- CY`O[ F[KXS]Y[
% 0BM@LE |
Infineon Technologies |
|
IPP60R099C6 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IPP60R099C6,IIPP60R099C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |