IPP086N10N3 डाटा शीट PDF( Datasheet )

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP086N10N3， IIPP086N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)