डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP041N12N3 | Power Transistor IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO-263) I |
Infineon |
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IPP041N12N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPP041N12N3,IIPP041N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
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IPP041N12N3G | Power-Transistor IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO-263) I |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |