IPP023N04N डाटा शीट PDF( Datasheet )

Ie]R "%&$!"#™3 Power-Transistor Features Q& ( ,  - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $     )# 7@BD2 B86D2 AA=:42 D:@? C Q' 492 ? ? 6= Q' @B> 2 ==6F6= Q. =DB

isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot

Ie]R "%&$!"#™3 Power-Transistor Features Q& ( ,  - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $     )# 7@BD2 B86D2 AA=:42 D:@? C Q' 492 ? ? 6= Q' @B> 2 ==6F6= Q. =D