डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPI65R600C6 | Power Transistor GIM@?N
+ =L 9 D- PA <= 1 =E A ;G F |
Infineon Technologies |
|
IPI65R600C6 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |