डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPI126N10N3G | Power-Transistor IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C ope |
Infineon Technologies |
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IPI126N10N3G | Power-Transistor | Infineon Technologies |
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IPI126N10N3 | Power-Transistor | Infineon |
www.DataSheet.in | 2017 | संपर्क |