डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD65R380C6 | Power Transistor FGK@?L
FTcP[ GgXST KTXR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a
=^^[FGKm =6
65*M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx65J380=6
>PcP KWTTc
Rev. 2.2 @X]P[
H^fTa FP]PVTT]c " Fd[cXPaZTc
->>;%'*H(>E4@+@0=A8AB> |
Infineon Technologies |
|
IPD65R380C6 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD65R380C6,IIPD65R380C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |