IPD65R250E6 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPD65R250E6 | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™E6650V
650VCoolMOS™E6PowerTransistor IPD65R250E6
DataSheet
Rev.2.2 Final
Industrial&Multimarket
650VCoolMOS™E6PowerTransisto |
 Infineon |
|
| IPD65R250E6 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD65R250E6,IIPD65R250E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.25Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
 INCHANGE |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |