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IPD65R250C6 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IPD65R250C6,IIPD65R250C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.25Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus |
INCHANGE |
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