डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD65R1K0CE | MOSFET IPD65R1K0CE
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonT |
Infineon |
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IPD65R1K0CE | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |