डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD60R360P7 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
|
IPD60R360P7 | MOSFET IPD60R360P7
MOSFET
600VCoolMOSªP7PowerDevice
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleand |
Infineon |
|
IPD60R360P7S | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu |
INCHANGE |
|
IPD60R360P7S | MOSFET IPD60R360P7S
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principl |
Infineon |
www.DataSheet.in | 2017 | संपर्क |