डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD50R800CE | MOSFET IPD50R800CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonT |
Infineon |
|
IPD50R800CE | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD50R800CE,IIPD50R800CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤800mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |