IPD320N20N3 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IPD320N20N3,IIPD320N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤32mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 17

IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-fr