डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD25CN10N | Power-Transistor IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Pro |
Infineon |
|
IPD25CN10N | N-Channel MOSFET isc N-Channel MOSFET Transistor
IPD25CN10N,IIPD25CN10N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤25mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
|
IPD25CN10NG | Power-Transistor IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Pro |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |