डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD096N08N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD096N08N3,IIPD096N08N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.6mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
|
IPD096N08N3 | Power-Transistor OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100 |
Infineon |
|
IPD096N08N3G | Power-Transistor OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100 |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |