डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD068P03L3G | Power-Transistor OptiMOSTM P3 Power-Transistor
Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications
• 175 °C operating temperature • 100% Avalanche tested • Pb-free; RoHS complian |
Infineon Technologies |
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IPD068P03L3 | Power-Transistor | Infineon |
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IPD068P03L3G | Power-Transistor | Infineon Technologies |
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IPD068P03L3 | N-Channel MOSFET | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |