IPB108N15N3G डाटा शीट PDF( Datasheet )

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A Features • N-channel, normal level • Excellent gate charge x R DS

Isc N-Channel MOSFET Transistor IPB108N15N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations