डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPB031NE7N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
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IPB031NE7N3 | Power Transistor OptiMOSTM3 Power-Transistor
Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM)
Produc |
Infineon |
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IPB031NE7N3G | Power-Transistor IPB031NE7N3 G
OptiMOSTM3 Power-Transistor
Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) produc |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |