डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPA60R060P7 | Power-Transistor IPA60R060P7
MOSFET
600VCoolMOSªP7PowerDevice
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleand |
Infineon |
|
IPA60R060P7 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
IPA60R060P7
FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 60mΩ(Max) ·100% avalanche te |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |