IPA086N10N3 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPA086N10N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-t |
 INCHANGE |
|
| IPA086N10N3 | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,100V
OptiMOS™3Power-Transistor IPA086N10N3G
DataSheet
Rev.2.4 Final
PowerManagement&Multimarket
IPA086N10N3 G
Opt |
 Infineon |
|
| IPA086N10N3G | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,100V
OptiMOS™3Power-Transistor IPA086N10N3G
DataSheet
Rev.2.4 Final
PowerManagement&Multimarket
IPA086N10N3 G
Opt |
 Infineon Technologies |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |