डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPA045N10N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPA045N10N3,IIPA045N10N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
|
IPA045N10N3 | MOSFET IPA045N10N3G
MOSFET
OptiMOSTM3Power-Transistor,100V
Features
•N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperatu |
Infineon |
|
IPA045N10N3G | MOSFET IPA045N10N3G
MOSFET
OptiMOSTM3Power-Transistor,100V
Features
•N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperatu |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |