IPA037N08N3 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.7mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to

OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resi

OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resi