डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IGT8E21 | Insulated Gate Bipolar Transistor mTM1J~~~
Insulated Gate Bipolar Transistor
20AMPEFlES 400, 500 VOLTS
EQUIV. RDS(ON) =0.145 n.
This IG"f"I Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching d |
GE |
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IGT8E21 | Insulated Gate Bipolar Transistor | GE |
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IGT8E20 | Insulated Gate Bipolar Transistor | GE |
www.DataSheet.in | 2017 | संपर्क |