डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IGT4E10 | Insulated Gate Bipolar Transistor mTM1J~~~
Insulated Gate Bipolar Transistor
IGT4D1 O,E~ ~Jr
10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il
This IGT"" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off po |
GE |
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IGT4E10 | Insulated Gate Bipolar Transistor | GE |
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IGT4E11 | Insulated Gate Bipolar Transistor | GE |
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