डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IGC39T65QE | High Speed IGBT3 IGC39T65QE
High Speed IGBT3 Chip
Features • VCES = 650 V • ICn = 75 A • 650 V trench & field stop technology
• High switching speed
• Low VCEsat • Low EMI
• Low turn-off losses
• Positive tempe |
Infineon |
|
IGC39T65QE | High Speed IGBT3 | Infineon |
www.DataSheet.in | 2017 | संपर्क |