HM44 डाटा शीट PDF( Datasheet )

Description The +0$ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =A RDS(

HM4402C N-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applica

Description The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =14A RDS(

HM4404 HM4404 高效率, 同步, 快速升压充电降压放电控制器 1 简介 2 功能 .3是一个支持高压输入的同步升压充电控制器，同时支  升压充电管理（涓流，恒�

30V N-Channel Enhancement-Mode MOSFET 30V N 沟道增强型 MOS 管 HM4406A VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 9.0mΩ RDS(ON), [email protected], Ids@10A = 12mΩ Features 特性 Advanced trench process technology

M P-Channel Enhancement Mode Power MOSFET Description The HM4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is s