डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HM3400 | Synchronous Boost DC/DC Regulator HM3400
Synchronous Boost DC/DC Regulator HM3400
Features
Description
z Up to 96% Efficiency z Low voltage start-up:0.9V z Shut-down current: < 1µA z Input voltage:0.9V~4.4V z Output voltage:2.5V� |
H&M Semiconductor |
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HM3400B | N-Channel Enhancement Mode Power MOSFET +03400%
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The +03400% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This dev |
H&M Semiconductor |
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HM3400C | N-Channel Enhancement Mode Power MOSFET +0&
N-Channel Enhancement Mode Power MOSFET
Description
The +0& uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or i |
H&M Semiconductor |
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HM3400D | N-Channel Enhancement Mode Power MOSFET HM3400D
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3400D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devic |
H&M Semiconductor |
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HM3400DR | N-Channel Enhancement Mode Power MOSFET HM3400DR
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3400DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This dev |
H&M Semiconductor |
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HM3400PR | N-Channel Enhancement Mode Power MOSFET HM3400PR
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3400PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This dev |
H&M Semiconductor |
www.DataSheet.in | 2017 | संपर्क |