डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HGTG30N60B3 | N-Channel IGBT HGTG30N60B3
Data Sheet August 2003
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device |
Fairchild Semiconductor |
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HGTG30N60B3 | N-Channel IGBT HGTG30N60B3
Data Sheet January 2000 File Number 4444.2
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar trans |
Intersil Corporation |
|
HGTG30N60B3 | IGBT IGBT - NPT
600 V
HGTG30N60B3
Description The HGTG30N60B3 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT is ideal for many |
ON Semiconductor |
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HGTG30N60B3D | N-Channel IGBT HGTG30N60B3D, HGT4E30N60B3DS
Data Sheet December 2001
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices c |
Fairchild Semiconductor |
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HGTG30N60B3D | N-Channel IGBT HGTG30N60B3D
Data Sheet January 2000 File Number 4446.2
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best |
Intersil Corporation |
|
HGTG30N60B3D | N-Channel IGBT UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
60 A, 600 V
HGTG30N60B3D
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors |
ON Semiconductor |
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