डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HFA2 | SAFETY RELAY =;64
E6;:FK D:?6K
/D:?6K I>F= ;BD8>7?K |
Hongfa Technology |
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HFA200FA120P | Ultrafast Soft Recovery Diode www.DataSheet.co.kr
HFA200FA120P
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 200 A
FEATURES
• Fast recovery time characteristic • Electrically isolated base plate • Large creepage dis |
Vishay Siliconix |
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HFA200MD40C | Ultrafast/ Soft Recovery Diode PD-2.450 rev. B 01/99
HEXFRED
Features
HFA200MD40C
Ultrafast, Soft Recovery Diode
VR = 400V VF (typ.) = 0.9V IF(AV) = 200A Qrr (typ.) = 330nC IRRM(typ.) = 8.1A trr(typ.) = 45ns di(rec)M/dt (typ.) = 270A/ |
International Rectifier |
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HFA200MD40C | Soft Recovery Diode HFA200MD40C
Ultrafast, Soft Recovery Diode
FEATURES ·Reduced RFI and EMI ·Reduced Snubbing ·Extensive Characterization of Recovery Parameters ·Minimum Lot-to-Lot variations for robust device
performance an |
INCHANGE |
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HFA200MD40D | Ultrafast Soft Recovery Diode PD-2.510 rev. A 02/99
HEXFRED
Features
HFA200MD40D
TM
Ultrafast, Soft Recovery Diode
V R = 400V V F(typ.) = 0.9V IF(AV) = 200A Qrr (typ.) = 330nC IRRM(typ.) = 8.1A trr(typ.) = 45ns di(rec)M/dt (typ.) = 2 |
IRF |
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HFA20N50U | 500V N-Channel MOSFET HFA20N50U
HFA20N50U
500V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Ch |
SemiHow |
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HFA240NJ40C | Ultrafast/ Soft Recovery Diode PD -2.453 rev. B 02/99
HFA240NJ40C
HEXFRED
Features
Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters
TM
Ultrafast, Soft Recovery Diode
LUG TERMINAL ANODE 1 LUG T |
International Rectifier |
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