HAT2096H डाटा शीट PDF( Datasheet )

HAT2096H Silicon N Channel Power MOS FET Power Switching ADE-208-1431B (Z) 3rd. Edition Aug. 2002 Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance

HAT2096H Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 4.2 mΩ typ. (at VGS = 10 V)