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HAT2036R | Silicon N-Channel Power MOSFET HAT2036R
Silicon N Channel Power MOS FET Power Switching
ADE-208-665B(Z) Target specification 3rd. Edition May 1998 Features
• Low on-resistance R DS(on) =12mΩ typ • Capable of 4.5 V gate drive • Low d |
Hitachi Semiconductor |
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HAT2036R | Silicon N-Channel Power MOSFET HAT2036R
Silicon N Channel Power MOS FET Power Switching
Features
• Low on-resistance RDS (on) = 12 mΩ typ
• Capable of 4.5 V gate drive • Low drive current • High density mounting • High speed swi |
Renesas |
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