HAT1036R डाटा शीट PDF( Datasheet )

HAT1036R Silicon P Channel Power MOS FET Power Switching ADE-208-662D (Z) 5th. Edition February 1999 Features • Low on-resistance R DS(on) = 11 mΩ typ • Capable of -4 V gate drive • Low drive current

HAT1036R Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance RDS (on) = 11 mΩ typ • Capable of –4 V gate drive • Low drive current • High density mounting Outline RENESAS P